sqj456ep www.vishay.com vishay siliconix s11-2288-rev. f, 28-nov-11 1 document number: 65279 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive n-channel 100 v (d-s) 175 c mosfet features ? halogen-free according to iec 61249-2-21 definition ?trenchfet ? power mosfet ? aec-q101 qualified d ?100 % r g and uis tested ? compliant to rohs directive 2002/95/ec notes a. package limited. b. pulse test; pulse width 300 s, duty cycle 2 %. c. when mounted on 1" squa re pcb (fr-4 material). d. parametric verification ongoing. e. see solder profile ( www.vishay.com/doc?73257 ). the powerpak so-8l. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fill et at the exposed copper tip cannot be guaranteed and is not r equired to ensure adequate bottom side solder interconnection. f. rework conditions: manual soldering with a soldering iron is not recommended for leadless components. product summary v ds (v) 100 r ds(on) ( ) at v gs = 10 v 0.026 r ds(on) ( ) at v gs = 6 v 0.030 i d (a) 32 configuration single d g s n-channel mosfet 4 6.15 mm powerpak ? so-8l single 5.13 mm 3 2 1 g s s s d ordering information package powerpak so-8l lead (pb)-free and halo gen-free SQJ456EP-T1-GE3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 100 v gate-source voltage v gs 20 continuous drain current t c = 25 c a i d 32 a t c = 125 c 21 continuous source curr ent (diode conduction) a i s 32 pulsed drain current b i dm 128 single pulse avalanche current l = 0.1 mh i as 30 single pulse avalanche energy e as 45 mj maximum power dissipation b t c = 25 c p d 83 w t c = 125 c 27 operating junction and storage temperature range t j , t stg - 55 to + 175 c soldering recommendations (peak temperature) e, f 260 thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 65 c/w junction-to-case (drain) r thjc 1.8
sqj456ep www.vishay.com vishay siliconix s11-2288-rev. f, 28-nov-11 2 document number: 65279 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design , not subject to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0, i d = 250 a 100 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 3.0 3.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = 100 v - - 1 a v gs = 0 v v ds = 100 v, t j = 125 c - - 50 v gs = 0 v v ds = 100 v, t j = 175 c - - 150 on-state drain current a i d(on) v gs = 10 v v ds 5 v 30 - - a drain-source on-state resistance a r ds(on) v gs = 10 v i d = 9.3 a - 0.021 0.026 v gs = 6 v i d = 8.8 a - 0.024 0.030 v gs = 10 v i d = 9.3 a, t j = 125 c - 0.040 0.049 v gs = 10 v i d = 9.3 a, t j = 175 c - 0.051 0.063 forward transconductance b g fs v ds = 15 v, i d = 9.3 a - 36 - s dynamic b input capacitance c iss v gs = 0 v v ds = 25 v, f = 1 mhz - 2673 3342 pf output capacitance c oss - 292 365 reverse transfer capacitance c rss - 106 133 total gate charge c q g v gs = 10 v v ds = 15 v, i d = 6 a -4263 nc gate-source charge c q gs -10- gate-drain charge c q gd -7.6- gate resistance r g f = 1 mhz 0.31 1.72 3.12 turn-on delay time c t d(on) v dd = 10 v, r l = 10 i d ? 1 a, v gen = 10 v, r g = 6 -1421 ns rise time c t r -1218 turn-off delay time c t d(off) -3553 fall time c t f -812 source-drain diode ratings and characteristics b pulsed current a i sm - - 128 a forward voltage v sd i f = 4.3 a, v gs = 0 - 0.75 1.2 v
sqj456ep www.vishay.com vishay siliconix s11-2288-rev. f, 28-nov-11 3 document number: 65279 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics on-resistance vs. drain current gate charge transfer characteristics capacitance on-resistance vs. junction temperature 0 8 16 24 32 40 012345 v gs = 10 v thru 6 v 4 v v ds - drain-to-source voltage (v) i d - drain current (a) 5 v 0.00 0.01 0.02 0.03 0.04 0 8 16 24 32 40 i d - drain current (a) v gs = 10 v v gs = 6 v r ds(on) - on-resistance ( ? ) v gs - gate-to-source voltage (v) q g - total gate charge (nc) 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 i d = 6 a v ds = 15 v 0 8 16 24 32 40 0123456 t c = 125 c - 55 c 25 c v gs - gate-to-source voltage (v) - drain current (a) i d v ds - drain-to-source voltage (v) c - capacitance (pf) 0 500 1000 1500 2000 2500 3000 3500 0 20406080100 c iss c oss c rss 0.5 0.9 1.3 1.7 2.1 2.5 175 v gs = 10 v i d = 9.3 a t j - junction temperature (c) (normalized) - on-resistance r ds(on) - 50 150 125 100 75 50 25 0 - 25
sqj456ep www.vishay.com vishay siliconix s11-2288-rev. f, 28-nov-11 4 document number: 65279 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) source drain diode forward voltage threshold voltage on-resistance vs. gate-to source voltage transconductance drain source breakdown vs . junction temperature v sd - - source-to-drain voltage (v) i s - source current (a) 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c i d = 250 a variance (v) v gs(th) t j - temperature (c) - 1.8 - 1.4 - 0.2 0.2 0.6 0 i d = 5 ma - 50 - 25 150 125 100 75 50 25 175 - 1.0 - 0.6 0.00 0.05 0.10 0.20 0.25 0246810 t j = 25 c r ds(on) - on-resistance ( ? ) v gs - gate-to-source voltage (v) t j = 150 c 0.15 0 16 32 48 64 80 0 5 10 15 20 25 i d - drain current (a) - transconductance (s) g fs t c = 125 c t c = 25 c t c = - 55 c 100 107 114 121 128 135 - 50 - 25 0 25 50 75 100 125 150 175 i d =1ma t j - junction temperature (c) v d s - drain-to- s ource voltage (v)
sqj456ep www.vishay.com vishay siliconix s11-2288-rev. f, 28-nov-11 5 document number: 65279 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v d s - drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecified i d - drain current (a) t c = 25 c single p u lse 100 s b v dss limited 1 ms 10 ms 100 ms, 1 s, 10 s, dc limited by r * ds(on) i d limited i dm limited 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 65 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
sqj456ep www.vishay.com vishay siliconix s11-2288-rev. f, 28-nov-11 6 document number: 65279 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal im pedance junction-to-case (25 c) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circ uit board - fr4, size 1" x 1" x 0. 062", double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldwide manufactu ring capability. products may be manufact ured at one of seve ral qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see w ww.vishay.com/ppg?65279 . 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance single pulse 0.02 0.05
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